Hi,

I'm trying to characterize photosensible negative dry resist ORDYLSY330
(thickness 30 micron).I expose my resist on Karl SUSS MA6 and develop it using
BMR developer C-3, rinse BMR F-5 (resist, developer, rinse are all from Elga
Europe).After develop ad rinse (independently of exposure) I observe  strong
resist residuals every where .This phenomenon has been observed even if I don't
expose the laminated silicon wafer but I simply try to remove dry resist using
developer(I see resist halos everywhere).I tried to increase development time,
rinse time but...no improvments. (A summary of laminating process we
used:Coating speed was set to 0,4m/min, Pressure setting 2 on RLM scale, Heat
105°C).

Thanks in advance for your support

Noemi