I used MAN 1410 a negative tone photoresist from Microresist
http://www.microresist.de/ma-N1400_400_2005_en.htm
The thickness of Al was 300 nm and I never observed deterioration of the
metallic thin film. The developer was MA-D 533. The only weak point I heard
about this PR is that is not easy to spin coat on glass wafers.

Cheers,

Schahrazede

-----Original Message-----
From: Wilson, Thomas
Subject: RE: [mems-talk] Problems with lift-off using S1813 photoresist

I will be trying next week for my lift-off work, the image reversal
process for aluminum (and other metallizations) as described by Meier et
al., "Fabrication of an all-refractory circuit using lift-off with
image-reversal photoresist", IEEE Transactions on Magnetics, Vol 27, No.
2, March 1991. I will be using AZ 5214-E and AZ Developer. The latter is
the only developer, so I'm told, that does NOT etch aluminum. I do know
that AZ 351 did etch my aluminum films undesirably on previous
processing steps, so I have to abandon that developer.