I would suggest if you can spin coat S1813 (about 1 micron thick) and
then after exposing for the required time, dip the wafer in
cholorobenzene solution for about 50secs and then dry with nitrogen
gun and then develop it in MF319 (approx time 20 secs). this in my
opinion should give you the required overhang for metal evaporation
and liftoff.

-anirban

On 8/23/05, schahrazede mouaziz  wrote:
> I used MAN 1410 a negative tone photoresist from Microresist
> http://www.microresist.de/ma-N1400_400_2005_en.htm
> The thickness of Al was 300 nm and I never observed deterioration of the
> metallic thin film. The developer was MA-D 533. The only weak point I heard
> about this PR is that is not easy to spin coat on glass wafers.
>
> -----Original Message-----
> From: Wilson, Thomas
> Subject: RE: [mems-talk] Problems with lift-off using S1813 photoresist
>
> I will be trying next week for my lift-off work, the image reversal
> process for aluminum (and other metallizations) as described by Meier et
> al., "Fabrication of an all-refractory circuit using lift-off with
> image-reversal photoresist", IEEE Transactions on Magnetics, Vol 27, No.
> 2, March 1991. I will be using AZ 5214-E and AZ Developer. The latter is
> the only developer, so I'm told, that does NOT etch aluminum. I do know
> that AZ 351 did etch my aluminum films undesirably on previous
> processing steps, so I have to abandon that developer.