Hi, Bill,

   Thanks for your reply. I am sorry that I didn't describe my question
well.
   I have electroplated copper pattern on top of gold and want to remove the
exposed gold.
   I am not sure if I can use lift-off technology to achieve that.
   Any suggestion?

Best,

Richard

----- Original Message -----
From: "Bill Moffat" 
To: "General MEMS discussion" 
Sent: Wednesday, December 07, 2005 8:56 AM
Subject: RE: [mems-talk] Argon plasma for gold etching


> Richard,
>        Argon is inert, Argon plasma is electrically active but still
> inert.  It can sputter but the amount removed is small.  Think maybe an
> Angstrom a minute in a low energy hybrid plasma descummer, maybe 10
> Angstroms a minute in a high intensity single wafer resist stripper.
> With an over $1M Applied Materials 5000 R.I.E. think maybe 100 Angstroms
> per minute. All of which is cost and time prohibitive.  Think metal lift
> off for definition better than 0.08 micron thicknesses up to 20 to 30
> Microns of copper.  10 Microns of Tantalum for flip chip bumps or well
> over 5 microns of Gold.  Contact me for more details.
>
> Bill Moffat, CEO
> Yield Engineering Systems, Inc.
> 2185 Oakland Rd., San Jose, CA  95131
> (408) 954-8353
>
> -----Original Message-----
> From: [email protected]
> [mailto:[email protected]] On Behalf Of Richard Chang
> Sent: Tuesday, December 06, 2005 4:07 PM
> To: General MEMS discussion
> Subject: [mems-talk] Argon plasma for gold etching
>
> Hi, All,
>
>   I want to use argon plasma to etch away exposed gold.
>   My thickness of gold is 1 micron.
>   Does anybody have the recipe for the plasma etching, like RF power,
> pressure of Argon?
>   How long it might take to etch away 1 micron thick gold?
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