Hi Andrea,
Maybe you can try phosphoric acid at 80 degrees C, if you don't have
aluminium layers.
regards,
ck
---
Instrumentation Lab.
Microelectronics
TU Delft.
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Sent: Thursday, January 12, 2006 8:46 PM
Subject: [mems-talk] silicon nitride etch
>I am interested in chemical etching of silicon nitride LPCVD deposited.
> Actually, I'm using BHF, but it has a slow etch rate (10A/min). Is there
> something faster?
> Thanks
> Andrea