Andrea,

  HF (49%) works. The etching rate is about 150~200A/min.
  Photoresist like AZP4620 can be utilized as a mask if nitride thickness is
less than 1000A
  Try to keep PR "wet" before etching, they can survive longer.

Aegis Liang


On 1/13/06, [email protected]  wrote:
>
> I am interested in chemical etching of silicon nitride LPCVD deposited.
> Actually, I'm using BHF, but it has a slow etch rate (10A/min). Is there
> something faster?
> Thanks
> Andrea