Destro,

For standard EBL system like Raith 150 or E-LiNE, there should be some
routine procedure called overlay alignment to do this job. Some nano-fans
also reform the SEM into an EBL, and have different positioning tricks. One
is to have alignment marks very close to your formal pattern in the first
layer. When you do the alignment, you can establish a very local coordinates
based on these local marks.

Good luck,

Hongjun

--------------------------------------
Hongjun Zeng, PhD
MEMS/Nano Scientist
Nanotechnology Core Facility
(NCF formerly MAL)
University of Illinois at Chicago
3064 ERF Building
842 W. Taylor St., Chicago, IL 60607
Tel. 312-355-1259, Fax: 312-413-0447
------------------------------------

-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Z Destro
Sent: Tuesday, January 17, 2006 8:32 PM
To: [email protected]
Subject: [mems-talk] Alignment on E-beam Writing

Hi all,
I am wondering how to make the alignment when we are trying to make
multilayers using e-beam lithography. as for photolithography, we can use
alignment mark on masks to make sure the structure on different layers are
correctly aligned. but for E-beam lighography, I have no idea. Could anyone
explain it for me?