silicon nitride: mechanism leading to intrinsic stress
Andrea Mazzolari
2006-02-24
Silicon Nitride deposited by LPCVD result in a tensile stress ranging from
90-1000 MPa.
This tensile stress is the sum of a thermal stress (compressive) and an
intrinsic stress (tensile). The last one is very dependent on deposition
condition. Which is the mechanism which lead to intrinsic stress formation?
Many thanks
Andrea