Dear Pradeep,
How fast can DRIE etch silica? Since silica is used as mask during DRIE, it
may take too long to etch silica, say 20um. Do you mean by varying
parameters, etch rate can be much faster? Thanks.

Regards,
Yilei Zhang


-----Original Message-----
From: Pradeep Dixit [mailto:[email protected]]
Sent: Friday, February 24, 2006 11:03 PM
To: General MEMS discussion
Subject: Re: [mems-talk] anisotropic etching of silica

Dear Yilei,

You can use DRIE process to get constant tapered profile
(negative/positive). You will have to optimize certain parameters like
Oxygen flow rate, SF6 flow rate and etch/passivation cycle time ratio.
however its a bit difficult to control.

Thanks,
Pradeep