J.J.,
    My first suggestion on sputtering nitride films is not to do it.
The films invariably suffer from a number of problems. They are low
density and have a lot of pin holes so that they do not work well as a
masking layer. With that caviat, the sputter yield in pure argon is
quite low so use low RF power (200-150W for a 4" head) to avoid excess
target heating and perform long depositons at the lowest pressure you
can achieve.

Good luck,
   Mike Martin
   U. of Louisville

>>> [email protected] 02/28/06 1:27 AM >>>
Hi,Everyone
Right now I am trying to sputtering silicon nitride on copper and
silicon surface. Right now I have nitride target on hand. Can anyone
give me some suggestion on the sputtering parameters? Such as do I have
to have nitrogen gas flow beside the argon flow ? If yes, what is flow
rate of the argon and nitrogen ? what is the RF power as well ?
Thanks for your helps.
J.J. Wang