For oxide growth rate, see this:
http://ee.byu.edu/cleanroom/OxideThickCalc.phtml
Select 'wet' for steam oxidation.
I'm not an expert in this, but I guess wafers should be loaded and removed in a
nitrogen atmosphere.
Regards,
Martin.
-------------------------
Dr. Martin Prest
Research Fellow
Emerging Device Technology Research Centre
The University of Birmingham
U.K.
-------------------------
> -----Original Message-----
> From: Hui Han [mailto:[email protected]]
> Sent: 08 March 2006 15:49
> To: [email protected]
> Subject: [mems-talk] Thermal Growth silicon dioxide
>
> Hi, all,
> I need some help in thermal growth SiO2, including the
> detailed steps
> (for example, if the Si sbustrate are directly interted into
> and removed
> out from the tube furnance or not), the rough growth rate.
>
> I want to use water steam to promote the oxidation.
>
> Thanks for helps.