A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Post bake for AZ P4620 photoresist
Post bake for AZ P4620 photoresist
2006-03-14
Rupesh Sawant
2006-03-16
Robert Black
2006-03-14
Brubaker Chad
2006-03-14
Isaac Chan
2006-03-15
ZICKAR Michaël
2006-03-15
[email protected]
2006-03-15
Bill Moffat
2006-03-17
Isaac Chan
Post bake for AZ P4620 photoresist
ZICKAR Michaël
2006-03-15
Hi Isaac,

I guess AZ P4620 resist is a positive resist. How does the deep UV cure
work? We are looking for a photoresist that survives well 400 µm of
DRIE, while keeping its verticality. A hard bake of 200°C would
certainly increase the selectivity between resist and silicon.

Best regards

Michael

--------------------------------------------
Institute of Microtechnology
University of Neuchatel
Switzerland


-----Original Message-----

AZ P4620 resist is the conventional novolak-based resist which has the
glass transition temperature (Tg) around 125C. Tg is for novolak resin.
Besides solvent diffusion, it's more because the PGMEA solvent in this
resist has a boiling temperature around 145C, so hard bake 120C helps to
drive the solvent out but not all. Ideally, the resist will not reflow if
Tg is above the solvent boiling point, but not for this type of resist.
Other ways to hard bake without resist reflow include deep UV cure of the
resist surface to form a hard outer shell, then hard bake on hotplate up
to 200C to completely drive out the solvent and cross-link the novolak.
But you can't use stripper or acetone to remove the resist after process.
You need O2 plasma to etch it completely.

Isaac
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
MEMStaff Inc.
Tanner EDA by Mentor Graphics
Addison Engineering
University Wafer