Dear all,

Does anyone know whether or not KOH can etch heavily-doped n-Si or SiGe
(say, ~1X10^19/cm^3)?? I did a KOH etch test and found that the etch rate
for the heavily-doped n-SiGe can be ignored. The KOH mixture I used is
H2O:IPA:KOH=400g:100g:125g. Can KOH solution with a different concentration
etch the heavily-doped n-Si or SiGe? From the literature I have learned
that heavily-doped p-Silicon can be used as KOH stop layer, but I am not
very sure what happens to the highly-doped n-silicon.

Thanks for any help or suggestions.

--
Da-xiang Zhou
PhD candidate
Semiconductor Physics Group
Cavendish Laboratory
University of Cambridge