Jay,

Depending on the materials you are using, you could try depositing
amorphous Si as the sacrificial layer, depositing and patterning your metal
film, opening etch windows to the a-Si, and then removing the a-Si using
XeF2. This is a dry, non-plasma etch that is very isotropic. If you don't
have access to a XeF2 system, we can probably help.

Robin



At 11:24 PM 4/19/2006, you wrote:
>Dear All,
>I am trying to deposit a suspended metal layer over a sacrificial layer.
>Is any material that can be used as a sacrifical layer that:
>1) Can be removed without using ultrasonic bath. The ultrasonic bath seem
>to liftoff my metal structure as well.
>2) Can be removed without RIE etching. The RIE etching has to be isotropic
>in order to etch out the underneath sacrificial layer. Our nanofacility
>doesn't have a very good etcher.
>
>I tried NR7, but it is pretty sticky, without utlrasonic, it is very hard
>to remove completely. Can I use SU-8 ?
>
>Any help and suggestion will be highly appreciated.