Dear colleagues,
     I am facing a problem of depositing a thick silicon dioxide film (3~6
micron)on silicon wafer by decomposition of TEOS in LPCVD. My experience is a
SiO2
with a thickness of 2 micro, and i wonder if there is any tricks or just by
increasing the deposition time? Will the stress induced crack be a problem? Any
recipe, experience or suggest will be appreciated, thanks in advance.


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Sincerely,
Qiao-Da-Yong
Northwestern Polytechnical University
M/NEMS Lab.
P.O. Box 638, No.127 West FriendShip Road, Xi'an
P.R. China
ZipCode:710072
Tel£º86-029-88460353-8112
E-mail£º[email protected]