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MEMSnet Home: MEMS-Talk: Patterning SU-8 for DRIE process
Patterning SU-8 for DRIE process
2006-07-31
D. Zhou
2006-07-31
Florian Herrault
2006-07-31
D. Zhou
2006-08-02
Hongjun-ECE
2006-07-31
Brubaker Chad
Patterning SU-8 for DRIE process
D. Zhou
2006-07-31
Hi Florian,

Thanks very much for your message. Actually I know nothing about SU-8 at
all. The reason why I am considering SU-8 as a candidate for the DRIE mask
is that it could be thick. I tried S1828 (the thickest positive resist
available in our group) with low spin speed but still could not reach the
required thickness. Silcon dioxide is the perfect mask but our facility
broke down and will not be ready in September. According to your
suggestion, what negative resist can I use for this purpose? How thick can
it be? And how to pattern it?

Xiang



On Jul 31 2006, Florian Herrault wrote:

>Hi Xiang,
>
>I am surprised that your cleanroom allows you to use SU-8 as a mask for ICP
>etching. SU-8 will dramatically contaminate your chamber. Why don't you use
>thick negative resist ? Plus, it will be hard to remove your SU-8 etch mask
>once your DRIE etch is done... I don't see any advantages to go for a SU-8
>mask. Could you please give more information ?
>

--
Da-xiang Zhou
PhD candidate
Semiconductor Physics Group
Cavendish Laboratory
University of Cambridge

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