Hi Oliver,

I deposite 200nm Pt on Si with 50A Ti adhesion layer via e-beam evaporator
and then put that into HF solution. Pt was removed (peeled off) after
several minute. Is that difference coming from machine we used?

Thanks

Jeehwan

-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of Oliver Horn
Sent: Thursday, August 03, 2006 12:30 AM
To: General MEMS discussion
Subject: Re: [mems-talk] Pt on Si

Hi Kim,

I did variations from 125 to 250 nm Pt, directly sputtered on fresh
HF-dipped Si. It survived a lithography step and wet chemical etching.
But don't use an ultrasonic bath!