You can prevent oxidation of the In by evaporating a thin layer of Au
(e.g. 1500A) following the In deposition. You might find the following
paper helpful:

Da-Jeng Yao, Gang Chen, Chang-Jin, "CJ" Kim "low Temperature Eutectic
Bonding for In-Plane Type Micro Thermoelectric Cooler" Proc. 2001 ASME
Mechanical Eng. Congress and Exposition Nov 11-16, 2001 p. 1-4.

Roger Shile

-----Original Message-----


Hello,
I am trying to e-beam evaporate .35 microns indium on silicon with Ti/Au
on it. I am getting milky looking film instead of a shiny, aluminum like
film.
I am using indium shots 99.9999% using a moly liner in a AJA system.
This oxide prohibits me to bond this In coated wafer to another Au
coated
wafer.
Has anyone else encoutered the same issue with indium evap. How to get
rid
of the oxide.
Any suggestion will be appreciated.

thanks