Dear Da-xiang Zhou

            After DRIE Process Please Go for Brief Oxygen Plasma Ashing and
then Put the substrate in EKC Solution @ 65 degree celcius temprature for
about 20 to 30 min. you will get rid from side wall polymer.

Or if your sample is not having any metal pattren then you may also do the
same thing in Piranha solution after brief Oxygen Plasma ashing.

With Best Wishes,
Manish Hooda


----- Original Message -----
From: "D. Zhou" 
To: "MEMS_BBS" 
Sent: Thursday, August 10, 2006 4:34 PM
Subject: [mems-talk] clean the chips after DRIE


> Dear all,
>
> I used S1813 as the mask for the DRIE of the top layer from the
front-side.
> Then I put the chip upside down, attached it to an Oxide wafer and did
> another DRIE of the substrate from the back-side . After the etch, I found
> it difficult to remove the polymer formed during the etch. I dip my chips
> in Aceton for 10 mins and then used Oxygen plasmer to clean it. However,
> the top layer(device layer) of my chips were still not clean enough. Could
> anybody give me some suggestions on how to completely clean the chips
after
> these two DRIE process? Thanks very much.