Dear all,
I am looking for a material to be deposited on silicon wafer. Then I will
pattern the deposited material to expose silicon wafer.
For my special processing I need a masking  material that can withstand the
etching of a solution containing HF (50%) and Hydrogen Peroxide (30%) for 2
hours.

Any idea if Silicon Nitride (Si3N4) thin film on silicon can withstand etching
of HF & H2O2 combination.

Looking forward for response..

regards,
Pradeep Sharma


Pradeep Sharma,
Lab NB 02,
Institute of Atomic and Molecular Sciences (IAMS),
Academia Sinica, P.O. Box: 23-166,
Taipei-106, Taiwan, R.O.C.