A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Mask Material Against HF & H2O2 Wet Etch
Mask Material Against HF & H2O2 Wet Etch
2006-08-19
pradeep # sharma
2006-08-20
Shay Kaplan
2006-08-20
Joseph Grogan
2006-08-20
Bill Moffat
2006-08-20
乔大勇
Mask Material Against HF & H2O2 Wet Etch
Bill Moffat
2006-08-20
Pradeep,
             Anything containing silicon will be attacked by the
Fluorine in HF.  Bill Moffat

________________________________

From: [email protected] on behalf of pradeep # sharma
Sent: Sat 8/19/2006 5:13 AM
To: [email protected]
Subject: [mems-talk] Mask Material Against HF & H2O2 Wet Etch



Dear all,
I am looking for a material to be deposited on silicon wafer. Then I =
will pattern the deposited material to expose silicon wafer.
For my special processing I need a masking  material that can withstand =
the etching of a solution containing HF (50%) and Hydrogen Peroxide =
(30%) for 2 hours.

Any idea if Silicon Nitride (Si3N4) thin film on silicon can withstand =
etching of HF & H2O2 combination.
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
The Branford Group
Process Variations in Microsystems Manufacturing
Addison Engineering
Mentor Graphics Corporation