In my experience, SiN can withstand both HF and H2O2 , but i am not really sure
about the mixture of HF and H2O2


ÔÚÄúµÄÀ´ÐÅÖÐÔø¾­Ìáµ½:
>From: "pradeep # sharma" 
>Reply-To: pradeep # sharma ,
General MEMS discussion 
>To: [email protected]
>Subject: [mems-talk] Mask Material Against  HF & H2O2 Wet Etch
>Date:19 Aug 2006 12:13:02 -0000
>
>Dear all,
> I am looking for a material to be deposited on silicon wafer. Then I will
pattern the deposited material to expose silicon wafer.
> For my special processing I need a masking  material that can withstand the
etching of a solution containing HF (50%) and Hydrogen Peroxide (30%) for 2
hours.

>
> Any idea if Silicon Nitride (Si3N4) thin film on silicon can withstand etching
of HF & H2O2 combination.
>