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MEMSnet Home: MEMS-Talk: Mask Material Against HF & H2O2 Wet Etch
Mask Material Against HF & H2O2 Wet Etch
2006-08-19
pradeep # sharma
2006-08-20
Shay Kaplan
2006-08-20
Joseph Grogan
2006-08-20
Bill Moffat
2006-08-20
乔大勇
Mask Material Against HF & H2O2 Wet Etch
Shay Kaplan
2006-08-20
Nitride won't hold. Try polysilicon
Shay

-----Original Message-----
From: [email protected] [mailto:[email protected]]
On Behalf Of pradeep # sharma
Sent: Saturday, August 19, 2006 2:13 PM
To: [email protected]
Subject: [mems-talk] Mask Material Against HF & H2O2 Wet Etch

Dear all,
I am looking for a material to be deposited on silicon wafer. Then I will
pattern the deposited material to expose silicon wafer.
For my special processing I need a masking  material that can withstand the
etching of a solution containing HF (50%) and Hydrogen Peroxide (30%) for 2
hours.

Any idea if Silicon Nitride (Si3N4) thin film on silicon can withstand
etching of HF & H2O2 combination.

reply
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