Hi Pradeep,

Check the paper: "Etch Rates for Micromachining Processing-Part II" by
Kirt Williams, J of MEMS Vol 12, No 6, 2003

for a great source of multiple solution and material etch rates, I don't
think they have a specific mixture of HF & H2O2, but you can probably
find them individually and try to infer something from that.

good luck,
Joe Grogan





pradeep # sharma wrote:
> Dear all,
> I am looking for a material to be deposited on silicon wafer. Then I will
pattern the deposited material to expose silicon wafer.
> For my special processing I need a masking  material that can withstand the
etching of a solution containing HF (50%) and Hydrogen Peroxide (30%) for 2
hours.
>
> Any idea if Silicon Nitride (Si3N4) thin film on silicon can withstand etching
of HF & H2O2 combination.
>