Hi,

I know we have used in the past Inductively coupled Plasma (ICP) RIE for etching
of TiAlN, the main problem with this is that the etch rate is typically very
slow (5-7nm/min). However, can generate very isotropic etched structures (gate
electrodes as well in this case) and the slowness allows for good control of
etch depth.

  Regards,

  Jeff Kettle

  Forwarded Message

From:  "Vikram"     To:  [email protected]    Date:
Tue, 22 Aug 2006 04:32:19 -0700 (PDT)    Subject:  [mems-talk] Etching TiAlN

Hi Friends,      Could anyone tell me how to etch TiAlN layer over a silicon-di-
oxide   layer? I am working on gate electrodes for MOSFET. Any other ideas to
use other matals for the same are wlecome.     Regards  Vikram