Hehe sorry for the confusion Isaac, I was actually directing that
question to the person who asked the original question who signed his
emails as "Chan"

Nik

At 4:33 PM -0400 9/12/06, Isaac Chan wrote:
>Hi Nik,
>
>The ICP-RIE systems we have are from Trion Technology. I do anisotropic
>etching of silicon and silicon nitride of several microns but not as deep
>as 10-100 microns. Yes SF6, C4F8, and O2 should work as well. The bottom
>line is still your own recipe for a given material to be etched and the
>system you use. I am sure you can find other regimes of parameters with
>your process gases that doesn't work. Same thing applies to that paper
>I referred to. The science is just some guiding principles behind the
>process. You can't plug in some process parameters and have a "magic"
>formula to calculate the etch rate, geometrical etch profile, etc. What we
>can expect from all these papers is that *at least* the presented process
>recipe works in their subject under study. You can start your process
>development based on that recipe, at least better than random guesses.
>
>Regards,
>
>Isaac