Hi

I need to know if there is any negative organic resistant which could give me a
thickness of about 100nm when spun. It doesnt matter lithography method will be
used since its basically going to be a protective layer. It needs to have good
resistance to CF4 etch in the RIE but must etch with O2 in the RIE.

I also need to etch single crystal silicon about 55nm (top layer of SOI wafer)
with CF4 gas in the RIE. O2 cant be used as the aforementioned resist will be
used as a mask. Can someone give me a rough estimate of what power, gas pressure
and base pressure I should use. The wafer will be 1cm by 1cm in size.