Hi,

We are setting up a newly acquired PE 4410 sputter system for our TiW
film needs. While we are controlling the pressure and power during the
etch (as well as temperature), we still seem to have little control over
the stress in our films so something is going on that we are not aware
of. A couple hypothesis are: we do see a hydrogen peak before sputter
that has disappeared afterwards. How strong an influence would that have
on our film? Flow rate (Argon) is not fully controlled but we are
setting our pressure so that might have an influence.

Oh yes, we would like to run wafers with photo-resist which gives us a
temperature ceiling of perhaps 100C, rather limiting our parameters.

Recommendations for consultants with experience with controlling stress
in TiW films in the Bay Area would be hugely appreciated :D

Thanks!

Michael