Hi,

I would try using 2% HF dip for 60 seconds room temperature, and then
try to get into the vacuum pumpdown as quickly as possible.  I know that
sputtered Ti and TiW would both work under these conditions.

- Justin

Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc
(508) 770 - 2088 phone
(508) 770 - 5807 fax
www.advancedmicrosensors.com


-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of jpt sharma
Sent: Thursday, September 21, 2006 5:14 PM
To: [email protected]
Subject: [mems-talk] Ohmic contact on Si

Hi guys
  i am trying to make the ohmic contact on Si. I am thinking to deposit
Al by thermal evaporator. Do you guys have any idea if it works.
  Also I am wondering about the oxidation of Si. I want to deposit Al on
si not on Silicon oxide. Do you have any best idea to remove SiO2 (I
used BOE). And How long does it takes to oxidised again.