Hi,
If you can use Copper, why not use Cr/Cu (30/200nm) layer? Then anneal
at 400C for 1~2min, the contact will be good. No threshold voltage.
For Ti/Au or Cr/Au, the problem is the eutectic point is very low
250~300C. If carefully anneal at 250C  for 1min, maybe your metal pad is
still ok.



On 9/22/2006 12:31 PM, Nannan Chen wrote:

>Hi,
>
>Jpt, about your post on ohmic contact to silicon, is your silicon p-type or
n-type or just plain undoped sillicon?
>
>
>