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MEMSnet Home: MEMS-Talk: To avoid micro loading effect after RIE
To avoid micro loading effect after RIE
2006-10-27
Hyunsoo Park
2006-10-29
Qiao Dayong
To avoid micro loading effect after RIE
Hyunsoo Park
2006-10-27
Hi guys

I etched 1um of SIO2 with Cr mask in Oxford RIE.
But, after RIE I see some particles(which is called microloading) on
the SIO2 surface not the Cr surface.
I can't remove it with Acetone and O2 cleaning.
I have used only CHF3 gas for etching.
I may remove it with BOE but I am concerned it would etch not only
particles on bottome also sidewall.
Could you please tell me how to remove it?


Thank you
reply
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