I am interested in etching rates of silicon dioxide in low
concentrations of KOH. It looks from the literature I've seen that both
etch rate (ER) in Si and SiO2 and the selectivity ER_Si:ER_SiO2 will go
down with decrasing concentrations - but will this trend also hold when
reaching the 1e-1 - 1e-5 wt%?

Thanks
Peter