Ed:

Are you etching the nitride and is the delicate material exposed at the same
time or is there nitride over the whole surface? If you are etching away nitride
and the delicate material is under the nitride then you can etch 90% of the
nitride and then change your conditions to remove the final 10 % in a more
gentle nitride etch condition. This way you can drive the selectivity of the
underlying material much higher by changing power, pressure and possibly etch
chemistry. Wet chemistries won't work for you I have a feeling. Bob


-----Original Message-----
From: [email protected]
To: [email protected]
Sent: Wed, 29 Nov 2006 8:56 AM
Subject: Re: [mems-talk] Anisotropic Wet Etching of Silicon nitride


Hi Bob,

Thanks for the reply. The thing is that I would like to minimize the ions
bombardment damage from RIE to etch under a very "delicate" material.