A MEMS Clearinghouse® and information portal
for the MEMS and Nanotechnology community
RegisterSign-In
MEMSnet Home About Us What is MEMS? Beginner's Guide Discussion Groups Advertise Here
News
MEMSnet Home: MEMS-Talk: Precipitate during KOH etching
Precipitate during KOH etching
2007-02-08
sheeja mathew
2007-02-09
Ravi Shankar
2007-02-09
Thomas Xu
silicon nitride windows/membranes
2007-02-12
Joseph Grogan
Sol-Gel Silicon oxide
2007-02-13
Hichham-ElDin
2007-02-13
Rashid, Mamun
2007-02-13
Hichham-ElDin
2007-02-13
Rashid, Mamun
Precipitate during KOH etching
Ravi Shankar
2007-02-09
Hi Sheeja,
 is your agitation sufficient? have you used a magnetic stirrer or
ultrasonic?
regds
Ravi Shankar


On 2/8/07, sheeja mathew  wrote:
>
>
> Hi all,
>
> Sub: Precipitate during KOH etching
>
> We have a problem of black precipitate formation
>
> during KOH etching of Si. SiO2 is masking layer,
>
> Si is being etched in 30% KOH(30g KOH and 100ml
>
> DI water)   solution with 30ml tert-butanol*.
>
> The thickness of Si to be etched   is 10-12um.
>
> The tert butanol is added to avoid undercuts which
>
> will destroy   the right-angled beams.
>
> The etching solution is kept at 80C and once the
>
> solution stabilizes at the temperature the sample is
>
> put. A black deposition   is found on the sample especially on
>
> the pattern. Once the black precipitate   comes, further etching doesn't
> take place.
>
> Can anyone please suggest a solution?
reply
Events
Glossary
Materials
Links
MEMS-talk
Terms of Use | Contact Us | Search
MEMS Exchange
MEMS Industry Group
Coventor
Harrick Plasma
Tanner EDA
Harrick Plasma, Inc.
Process Variations in Microsystems Manufacturing
Tanner EDA by Mentor Graphics
The Branford Group