Hi Wang, what do you mean with "particle contamination" ?

Maybe this article will help you:
Materials Science in Semiconductor Processing 5 (2002) 51–60
Here yuo will find also a lot of references

Best regards,
Andrea


-----Messaggio originale-----
Da: [email protected] [mailto:[email protected]] Per
conto di ???
Inviato: lunedì 26 febbraio 2007 7.09
A: [email protected]
Oggetto: [mems-talk] Low Stress Si3N4 in LPCVD

Hi all

    I need to deposite 0.3um LP Si3N4 on <100> Si wafer which is low
stress(<300MPa) and Particle-free. I have search a lot of papers on internet
... The only way to get low stress Si3N4 is increasing DCS/NH3 ratio , but
particle contamination is getting worse. Is there anyone can share
informations about how to deposite low stress Si3N4 in LPCVD without
particle contamination.