Hihi,

  To my understanding, the silicon dioxide by PECVD more than one micro is easy
to crack. So my advised solution is you can deposite 1 micro silicon dioxide
first, after that, you anneal it for about an hour (ramp up). It is followed by
deposited another 0.6 micro silicon dioxide on the top, then annel again. The
problem should be solved.

  Best wishes,
  CHEN

udaybhaskar katreddi  wrote:
  Hi Everybody,
I have been depositing 1.6 micron silicon dioxide by PECVD process at 300
degrees temperature on silicon wafer coated with silicon nitride,after that I am
annealing at 620 degrees.Here I am having a problem that the deposited oxide is
peeling off,might be due to high stress ,so someone suggest me some solution to
sortout this problem.