Silicon Carbide has demonstrated many advantages over III-V compounds with its
large band gap.  The most superior property is of course is it's thermal
properties.  Microelectronics manufactured using silicon carbide substrates,
metal structures of the high melting point alloys like W, Ta, Os and lesser  Mo,
Au, Pt, and compounds of WC, TaC, Nb, Co are capable of function at 800 oC
(maybe higher).

Silicon carbide microelectronic wafer fab and etching technology is found the
literature for high temperature electronics.  Conference proceedings as well as
searching NASA Gennann Research Imitative should give you plenty of information.
Good Luck
R Davis


---- Andrea Mazzolari  wrote: >
> Hi All,
> I need to realize wet etch of silicon carbide single crystals.
> Can anyone provide me informations about this? It seams that silicon carbide
> it very hard to wet etch...