You can try Si-SixNy fusion bonding. It involves contacting the
wafers at room temperature followed by a high-temperature (~1000-1100 C)
anneal. The surface preparation of the Si and SiN surface will determine
the final quality of the bond. So, the SiN dep method is quite important.


I think there is some literature on this topic. Prof. Marty Schmidt's group
at MIT has done some work in this area.

--Aravind

Aravind Padmanabhan
Honeywell Technology Center
Plymouth, MN 55441
_______________________________________________________________________________
From: Rich Koba on Wed, Jun 17, 1998 2:10 PM
Subject: Bonding to silicon nitride
To: [email protected]


     Dear MEMS experts,

        I have a Si wafer coated with a LPCVD silicon nitride thin film
     200nm thick.  I need to bond this silicon nitride coated wafer to
     another Si wafer.  Are there any good methods for bonding a silicon
     nitride coated surface to another surface?  I am flexible about the
     surface coating of the second Si wafer.

     If there exists such a bonding method, does it matter whether the
     silicon nitride coating was deposted by LPCVD, PECVD or sputttering???

     Thanks,

     Richard Koba
     Foster-Miller, Inc.
     195 Bear Hill Road
     Waltham,  MA  02154-1196
     781-684-4197
     fax:  781-290-0693