Hi,
I am doing RIE removing SiN and Si with CF4/O2. But I need some literature
about how the RIE with CF4/O2 affect the metal film (like Cu), will RIE
generate point defect or damage the surface on the metal film? (I know RIE
with *Cl gas/ Ar will etch metal)
Can someone tell me a reference paper or any publication about the CF4/O2
RIE's effect on metal?

Thanks