Dear all,

I'm working on deep dry etch of p-Si (>10um) and I was trying to evaporate Ni as
etch mask. I was trying to use lift-off technique and my photoresist was
AZP4110. The problem is when I was washing away the photoresist using Acetone,
almost all of the Ni, no matter on the photoresist or on the Si, fell off the
wafer. I tried three times and the results were same, but when I previously
evaporate Al and Cr, I didn't see this kind of problem. I'm wondering if anyone
has the similar experience? Did I do anything wrong? Any suggestion to improve
the process? Thanks a lot!

Best regards,
Yiyi