Sudharshan,

Why don't you try DRIE process. It is very easy to etch 100 um opening
dimensions features in 300 um thick wafer, and quite standard prcoess.

Thanks
Pradeep


On 4/16/07, Sudarshan Hegde  wrote:
>
> The objective is to etch through vertical holes of 100 micron dimension in
> Si wafer of 300 micron thickness.
> I am using Si 110 wafer.
> I have tried out a parallelogram with one of the angles equal to 70.6 and
> the other as 109.4.
> But each time, I am getting slanted faces which results in stopping of
> etching.
> Please help me regarding regarding this if at all vertical holes are
> possible.