Hi Dan,

I have done some XeF2 silicon etching. at the pressure around 5 torr and room
temperature for chamber, with heating XeF2 holder up to 65C, the etch rate is
around 5um/min. You need to pulse it every minute though. But the etched
surface is very rough. The roughness is in the um order. I don't know whether
this is something you want. Hope this information help.

Yours
Bin

Quoting "Chilcott, Dan W" :

> To All,
>
> I am looking for a well controlled isotropic silicon etch for etching
> 2 um deep features. I do not believe that a timed plasma etch would
> be controlled enough for this application. I am looking for a control
> of better than 0.5 um from lot to lot and across the wafer. Any ideas?