Dear Arti,

I normally use Al for masking in the ICP by Al evaporation. I can etch
through-hole of a 500um wafer with around 300nm evaporated Al layer. Al can
be evaporated well to SiO2 as well. I don't know if you can use Al or you
have to use photoresist.

Regards,
Nam LE

On 6/29/07, Bill Moffat  wrote:
>
> Isaac is nearly right.  The trick is to stop any chance of moisture
> before the HMDS is applied.  Easiest way is vacuum/hot Nitrogen
> dehydration followed by HMDS vapor while the product is still in a
> vacuum dehydration chamber.
> Bill Moffat, CEO
> Yield Engineering Systems, Inc.
> 203-A Lawrence Drive, Livermore, CA  94551-5152
> (925) 373-8353
>
> [email protected]
>
> www.yieldengineering.com
>
>
> -----Original Message-----
> From: [email protected]
> [mailto:[email protected]] On Behalf Of Isaac Chan
> Sent: Thursday, June 28, 2007 7:57 AM
> To: Arti Tibrewala; General MEMS discussion
> Subject: Re: [mems-talk] Re: Mask for ICP (dry etching)
>
> Arti,
>
> Can you do a quick bake above 100C then cool it down with N2 gun and
> spin coat HMDS immediately?
>
> Isaac
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