Hi!

I had some problems with adhesion on oxide wafers using an AZ9260. I heat the
wafers at 110 C on the hot plate for 2-3 min before HMDS. Also the treatment
after photoresist deposition (pre-bake) is important. For your thickness I say
around 6 min at 110 C.

I hope this help.

Regards,

Miss Mihaela Carp
Research Associate, Division of Material Technology
School of Material Science and Engineering
Nanyang Technological University
Phone: +65 6790 4263, Fax: +65 6790 6994

-----Original Message-----
From: Arti Tibrewala [mailto:[email protected]]
Sent: Thursday, June 28, 2007 9:02 PM
To: [email protected]
Subject: [mems-talk] Re: Mask for ICP (dry etching)

Hi Everybody,

I am looking for a suitable mask for ICP (dry etching) process. I normally
use map1275 (7.5 um thick) photoresist from Microresist.
Problem with this photoresist is that I have adhesion problems on silicon di
oxide. I do use HMDS adhesion layer, but that doesn't help.
I spoke to microresist engineer and she told me problem is probably humidity
is my cleanroom is too high. Unfortunately I cannot change that. Hence I am
looking for other thick photoresist, which is less sensitive to humidity or
any other material.

Could anybody help?

Arti Tibrewala