Dear All,

           I am designing a photomask for a high density metal electrodes.
They electrodes are 2 microns of width, 5 mm long  and separated by 5~10
microns. I am planning for 200 nm of Ti/Au metal. The first question will be
should I use image reversal (AZ5214 using bright field mask) or bi-layer
photoresis (LOR+S1813 using dark field mask)? OR should I use completely
different photoresist? I found in the mems-talk archive that bi-layer
photoresist has some problem for high density electrodes. Any suggestion
will be highly appreciated. Thanks in advance.

Newaz