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MEMSnet Home: MEMS-Talk: Lift-off Process for High Density Metal Electrodes(5-10 microns separation)
Lift-off Process for High Density Metal Electrodes (5-10 microns separation)
2007-08-22
AKM Newaz
Lift-off Process for High Density Metal Electrodes(5-10 microns separation)
2007-08-22
Bill Moffat
III-V semiconductor wet etch
2007-08-22
Andrea Mazzolari
Lift-off Process for High Density Metal Electrodes(5-10 microns separation)
2007-08-22
Roger Shile
Lift-off Process for High Density Metal Electrodes(5-10 microns separation)
Bill Moffat
2007-08-22
Image reversal using a YES ammonia reversal unit has been the standard
for mask makers for the last 20 years.  Contact me for free tests and
technical papers discussing mask making with a 3 Sigma 0.08 micron
control.  Bill Moffat

-----Original Message-----
From: [email protected]
[mailto:[email protected]] On Behalf Of AKM Newaz
Sent: Wednesday, August 22, 2007 8:44 AM
To: [email protected]
Subject: [mems-talk] Lift-off Process for High Density Metal
Electrodes(5-10 microns separation)

Dear All,

           I am designing a photomask for a high density metal
electrodes.
They electrodes are 2 microns of width, 5 mm long  and separated by 5~10
microns. I am planning for 200 nm of Ti/Au metal. The first question
will be should I use image reversal (AZ5214 using bright field mask) or
bi-layer photoresis (LOR+S1813 using dark field mask)? OR should I use
completely different photoresist? I found in the mems-talk archive that
bi-layer photoresist has some problem for high density electrodes. Any
suggestion will be highly appreciated. Thanks in advance.

Newaz
reply
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