Hi

We have fabricated MIM structures (Au-PECVD Si3N4-SiCr) and found that the
leakage current of Si3N4 was incrediblely increased after SU-8 adhesive
bonding. We used semi-crossed linked SU-8 as the adhesive layer so that we
can create cavities on the bottom wafer and bond to MIM structure on
the bottom wafer. The SU-8 layer was right on the top of the Au layer after
bonding. The bonding temp was ramped up to 150 degree C with the applied
force 2000 NT over the 4" fused quartz wafer for 1hr. Could anyone share
with your insightful comments on the degradation of Si3N4 layer?

Thanks

Chih-Chieh