hi all
I am using AZ5214E as postive PR for the lift-off process. However,
the PR is keeping strip from sub during the development. My procedure
is

(Si sub with 1 micron PECVD SiO2 deposited and pre-cleaned with
actone, IPA, rinse with DI water, dry with N2 flow)

1) Dehydration: hot plate 150C 10 mins
    (no HDMS because I need the sub surface hydrophilic for the later function)
2) Spin coat: AZ5214E 5000RPM 1000R/s 30s
3) Softbake: 95C 1min
4) Expouse 7s @ 900W (MA8)
5) Develop (AZ developer 30s)
6) Rinse in DI water (30s)
7) Rinse with flow DI water and Dry with N2 flow

The situation is worst when I develop the sample immediately after
expouse, but getting better if I do a hardbake after exposure. But I
am not sure whether this hardbake will make later liftoff difficult or
not?

So, I would appreciate if you guys could give some suggestion on my
procedure. thanks a lot in advance!

Regards,
Steven