Hello all,
     I designed an optical modulator based on a film structure. But the
requirement of precision of film deposition (PECVD, Oxford plasma system 100)
is approximately 10 A.  It means a deposition time of 1.5 second for PECVD
amorphous silicon. I don't know whether this requirment is too difficult to
achieve. Maybe subtle changes in chamber of plasma system will lead a disabled
device, although we measure the film deposition rate every time before
fabriction.

Best regards!

X.Yan
[email protected]