Hi, all

I got two question about making a SU-8 microchannel with OTS (a SAM
hydrophobic material) modified pattern on part of channel bottom.

My first plan is to deposit OTS first on Si sub which with a layer of
SiO2. and then SU-8 photoresist pattern on to get the channnel pattern
with that OTS pattern just exposured at channel bottom. For this plan,
I got a question that whether the later O2 plasma to make whole
channel clean and hydrophilic will attack the OTS part to destroy it
or not? if attack, how to protect this part through the O2 plasma?

My second plan is to make the SU-8 channel pattern first, and then O2
plasma clean, After that, AZ5214 photoresist on to pattern OTS. But
for this plan, I am worring about the step that apply acetone to
remove AZ5214 after OTS deposit which also attack SU-8. In this case,
how to perform the AZ5214 removal with some chemical whith will not
attack SU-8.

Thanks a lot!